An empirical HBT large signal model for CAD

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 2137-2140

  Angelov, I ^a   Choumei, K ^b   Inoue, A ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

LARGE SIGNAL MODEL; POWER SPECTRUM MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036066859     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012293     Document Type: Article

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