Nonlinear III-V HBT compact models: Do we have what we need?

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 663-666

  Scott, Jonathan ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; PARAMETER ESTIMATION; PERFORMANCE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE; TRANSIT TIME DEVICES;

BASE COLLECTOR VOLTAGE; BASE EMITTER VOLTAGE; EARLY EFFECT; GESTALT MODEL; GUMMEL PLOT; TRANSFER CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035683231     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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2. Large-signal modelling of HBTs including self-heating and transit time effects
3. A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure
4. An accurate, large signal, high frequency model for GaAs HBTs
5. Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's
6. New GaInP/GaAs-HBT large-signal model for power applications
7. VBIC95, the vertical bipolar inter-company model
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11. max for microwave heterojunction transistors
12. Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors
13. Avalanche breakdown in HBTs: Variation with collector current and effect on linearity
14. T of bipolar transistors
15. Physics-based minority charge and transit time modeling for bipolar transistors