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Volumn 2, Issue , 1996, Pages 911-915

Verification of an HBT Gummel-Poon model by power spectrum

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0005709351     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1996.337724     Document Type: Conference Paper
Times cited : (4)

References (6)
  • 1
    • 0014780722 scopus 로고
    • An integral charge control model of bipolar transistors
    • H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors," Bell Syst. Tech. J. , vol. 49, no. 6/7, pp. 827-852, 1970
    • (1970) Bell Syst. Tech. J , vol.49 , Issue.6-7 , pp. 827-852
    • Gummel, H.K.1    Poon, H.C.2
  • 3
    • 0029308532 scopus 로고
    • Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's
    • I. Angelov, H. Zirath, and N. Rorsman, "Validation of a Nonlinear Transistor Model by Power Spectrum Characteristics of HEMT's and MESFET's," IEEE Trans. Microwave Theory Tech. , vol. 43, no. 5, pp. 1046-1052, 1995
    • (1995) IEEE Trans. Microwave Theory Tech , vol.43 , Issue.5 , pp. 1046-1052
    • Angelov, I.1    Zirath, H.2    Rorsman, N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.