Role of boron for defect evolution in hydrogen-implanted silicon

Applied Physics Letters

Volumn 83, Issue 15, 2003, Pages 3042-3044

  Lee, J K ^a   Hochbauer T ^a   Averitt, R D ^a   Nastasi, M ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPLEXATION; DIFFUSION; HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EXFOLIATION PHENOMENON;

SILICON;

EID: 0242272691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616979     Document Type: Article

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