Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 7, 1998, Pages 3522-3525

  Nazarov, A ^a   Pinchuk, V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b NATIONAL TECHNICAL UNIVERSITY OF UKRAINE   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004827220     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.3522     Document Type: Article

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