The influence of boron ion implantation on hydrogen blister formation in n-type silicon

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4176-4183

  Hochbauer T ^a   Walter, K C ^a   Schwarz, R B ^a   Nastasi, M ^a   Bower, R W ^b   Ensinger, W ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b University of California   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037834145     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371343     Document Type: Article

References (30)

1. J. P. Collinge, Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic, Boston, 1991).
2. M. Bruel et al., 1995 Proceedings of the IEEE, Tucson, A2 (1995), p. 178.
3. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
4. M. Bruel, Mater. Res. Bull. 23, 35 (1998).
5. Q.-Y. Tong, T. H. Lee, W. J. Kim, T. Y. Tan, U. Gösele, H. M. You, W. Yun, and J. K. O. Sin, 1996 Proceedings of the IEEE, Sanibel Island, FL (1996), p. 36.
6. Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, and T. H. Lee, Appl. Phys. Lett. 70, 1390 (1997).
7. M. Kaminski, IEEE Trans. Nucl. Sci. 18, 208 (1971).
8. A. Antilla, J. Hirvonen, and M. Hautala, Radiat. Eff. Lett. Sect. 57, 41 (1980).
9. M. Bister, J. Hirvonen, J. Räisänen, and A. Antilla, Radiat. Eff. 59, 199 (1981).
10. M. K. Weldon et al., J. Vac. Sci. Technol. B 15, 1065 (1997).
11. L. B. Freund, Appl. Phys. Lett. 70, 3519 (1997).
12. G. F. Cerofolini et al., Phys. Rev. B 46, 2061 (1992).
13. A. D. Marwick, G. S. Oehrlein, and M. Wittmer, Appl. Phys. Lett. 59, 198 (1991).
14. L. Korpas, J. W. Corbett, and S. K. Estreicher, Phys. Rev. B 46, 12365 (1992).
15. Q.-Y. Tong, R. Scholz, and U. Gösele, Appl. Phys. Lett. 72, 49 (1998).
16. R. W. Bower, L. Le Boeuf, and Y. A. Li, Nuovo Cimento D 19, 1871 (1997).
17. J. F. Ziegler, J. B. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
18. S. U. Campisano, S. Coffa, V. Raineri, F. Priolo, and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 80/81, 514 (1993).
19. A. Battaglia, F. Priolo, and E. Rimini, Appl. Surf. Sci. 56, 577 (1992).
20. G. Bai and M. A. Nicolet, J. Appl. Phys. 70, 649 (1991).
21. T. Höchbauer, Los Alamos National Laboratory (1999) (unpublished results).
22. J. T. Borenstein, J. W. Corbett, and S. J. Pearton, J. Appl. Phys. 73, 2751 (1993).
23. S. Z. Tokmoldin and B. N. Mukashev, J. Phys.: Condens. Matter 3, 9363 (1991).
24. J. W. Mayer and S. S. Lau, Electronic Material Science: For Integrated Circuits in Si and GaAs (Macmillan, New York, 1990), Chap. 3.
25. B. Holm, K. B. Nielsen, and B. B. Nielsen, Phys. Rev. Lett. 66, 2360 (1991).
26. S. J. Pearton, Mater. Sci. Eng., B 23, 130 (1994).
27. D. Fink, J. Krauser, D. Nagengast, T. A. Murphy, J. Erxmeier, L. Palmetshofer, D. Bräunig, and A. Weidinger, Appl. Phys. A: Mater. Sci. Process. 61, 381 (1995).
28. J. P. de Souza and H. Boudinov, Appl. Phys. Lett. 66, 3173 (1995).
29. J. Pearton, W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors, Springer series in Material Science Vol. 16 (Springer, New York, 1992). Chap. 9.
30. C. Herring and N. M. Johnson, in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson (Academic, Boston, 1991) Chap. 10.