Investigation of Czochralski Silicon Grown with Different Interstitial Oxygen Concentrations and Point Defect Populations

Journal of the Electrochemical Society

Volumn 148, Issue 9, 2001, Pages

  Sama, S ^a   Porrini, M ^b   Fogale, F ^b   Servidori, M ^a  

^a CNR   (Italy)

^b MEMC Electronic Materials   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242278122     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1388887     Document Type: Article

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