Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2671-2676

  Wang, Hong ^a,b   Ng, Geok Ing ^a,b   Zheng, Haiqun ^a,b   Yang, Hong ^b   Xiong, Yongzhong ^a,b   Halder, Subratra ^a,b   Yuan, Kaihua ^b   Tan, Chee Leong ^b   Rahdakrishnan, K ^b   Yoon, Soon Fatt ^b  

^a IEEE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

f MAX; f T; GaAs; Heterojunction bipolar transistor (HBT); InP InGaAs; Metamorphic; Microwave noise; Microwave power

Indexed keywords

MATAMORPHIC HETEROJUNCTION BIPOLAR TRANSISTORS (MHBT);

ELECTRIC BREAKDOWN; FREQUENCIES; GAIN MEASUREMENT; LEAKAGE CURRENTS; MICROWAVE MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035694108     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974688     Document Type: Article

References (12)

1. 0.67 As heterojunction bipolar transistors grown on GaAs
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3. Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors
4. Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
5. max new self-alignment InP/InGaAs HBTs with a highly Be-doped base layer grown by ALE/MOCVD
6. max in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions
7. InGaAs/InP heterojunction bipolar transistor grown by all-solid source molecular beam epitaxy
8. Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
9. Transport and related properties of (Ga,Al)As/GaAs double heterojunction bipolar transistors
10. 0.47As/InP double heterojunction bipolar transistors on GaAs substrates
11. Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors
12. Microwave noise performance of InP/InGaAs heterostructure bipolar transistors