Annihilation radii for dislocations intercepting a free surface with application to heteroepitaxial thin film growth

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 9-14

  Chang, M ^a   Mathis, S K ^a   Beltz, O E ^a   Landis, C M ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES;

CONTINUUM BASED ELASTICITY; FILM THICKNESS; LATTICE MISMATCHED GROWTH; THREADING DISLOCATION;

THIN FILMS;

EID: 0033330447     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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