Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1505-1509

  Hoke, W E ^a   Lemonias, P J ^a   Kennedy, T D ^a   Torabi, A ^a   Tong, E K ^a   Bourque, R J ^a   Jang, J H ^b   Cueva, G ^b   Dumka, D C ^b   Adesida, I ^b   Chang, K L ^c   Hsieh, K C ^c  

^a RAYTHEON COMPANY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYER; COMPOSITIONAL GRADING; METAMORPHIC GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535328     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1374624     Document Type: Conference Paper

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