Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 303-306

  Sawada, S ^a   Matsukawa, S ^a   Iwasaki, T ^a   Miura, Y ^a   Yokogawa, M ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

CHLORIDE VAPOR PHASE EPITAXY (C-VPE);

SEMICONDUCTING FILMS;

EID: 0034847703     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2001.929118     Document Type: Article

References (2)