Strain relaxation of InP film directly grown on GaAs patterned compliant substrate

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 71-76

  Zhang, Zhicheng ^a   Yang, Shaoyan ^a   Zhang, Fuqiang ^a   Li, Dabing ^a   Chen, Yonghai ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Dislocation; A1. Molecular beam epitaxy; A3. Organometallic vapor phase epitaxy; B2. Semiconductor III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION;

STRAIN RELAXATION;

CRYSTAL GROWTH;

EID: 0036077840     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01476-8     Document Type: Article

References (18)