Stoichiometric disturbances in ion implanted silicon carbide

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 737-740

  Morvan, E ^a   Monserrat, J ^a   Rebollo, J ^a   Flores, D ^a   Jorda X ^a   Locatelli, M L ^b   Ottaviani, L ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Ion Implantation; Monte Carlo Simulation; Stoichiometry

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ION IMPLANTATION; MONTE CARLO METHODS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY;

POST IMPLANTATION STOICHIOMETRY;

SILICON CARBIDE;

EID: 0031702311     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.737     Document Type: Article

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4. E. Morvan & al. Proceedings of the E-MRS 1996 Spring Meeting, Strasbourg, France, pp.A-2