Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Materials Science and Engineering: B

Volumn 90, Issue 3, 2002, Pages 301-308

  Ottaviani, Laurent ^a,c   Lazar, Mihai ^a   Locatelli, Marie Laure ^a   Planson, Dominique ^a   Chante, Jean Pierre ^a   Dubois, Christiane ^b  

^a Univ Claude Bernard Lyon1   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Amorphisation; Annealing; SIMS; Surface roughness

Indexed keywords

ALUMINUM; AMORPHIZATION; ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; DEGRADATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS;

CRYSTAL REORDERING;

SILICON CARBIDE;

EID: 0037192412     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00002-8     Document Type: Article

References (16)