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Volumn 389-393, Issue , 2002, Pages 827-830
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A comparative study of High-Temperature aluminum Post-Implantation annealing in 6H- and 4H-SiC, Non-Uniform temperature effects
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Author keywords
Annealing; Electrical activation; Ion implantation; RBS Channeling
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Indexed keywords
ALUMINUM;
ALUMINUM COMPOUNDS;
ANNEALING;
BACKSCATTERING;
CHEMICAL ACTIVATION;
HEATING FURNACES;
INDUCTION HEATING;
ION IMPLANTATION;
SHEET RESISTANCE;
SILICON CARBIDE;
SILICON WAFERS;
TEMPERATURE;
AMORPHOUS MATERIALS;
CRUCIBLE FURNACES;
CRYSTALLINE MATERIALS;
HALL EFFECT;
HIGH TEMPERATURE OPERATIONS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
ANNEALING TEMPERATURES;
ELECTRICAL ACTIVATION;
HALL EFFECT MEASUREMENT;
NONUNIFORM TEMPERATURE;
POSTIMPLANTATION ANNEALING;
RADIAL TEMPERATURE GRADIENTS;
RBS/CHANNELING;
RUTHERFORD BACK-SCATTERING;
SHEET RESISTANCE;
VANADIUM COMPOUNDS;
SILICON CARBIDE;
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EID: 0036436632
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.827 Document Type: Conference Paper |
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Times cited : (16)
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References (5)
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