EUVL square mask patterning with TaN absorber

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 431-436

  Yan, Pei Yang ^a   Ma, Andy ^a   Huang, Yi Chiau ^b   Stoehr, Brigitte ^b   Valdivia, Juan ^b  

^a INTEL CORPORATION   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

EUV lithography; EUVL mask; TaN absorber; TaN etch

Indexed keywords

QUARTZ; SILICON WAFERS; TANTALUM COMPOUNDS; THERMAL CONDUCTIVITY; ULTRAVIOLET RADIATION;

QUARTZ SUBSTRATES;

MASKS;

EID: 0037627727     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.468102     Document Type: Conference Paper

References (3)

1. P. Y. Yan, G. Zhang, P. Kofron, J. Powers, M. Tran, T. Liang, A. Stivers, and F. C. Lo, "EUV Mask Absorber Characterization and Selection." SPIE Vol. 4066, pp116, 2000.
2. P. Y. Yan, G. Zhang, A. Ma, and T. Liang, "TaN EUV Mask Fabrication and Characterization," SPIE Vol 4343, pp409, Emerging Lithographic Technologies, 2001.
3. Guojing Zhang and P. Y. Yan, "Cr and TaN absorber mask etch CD study for EUVL," to be published to SPIE Vol 4889, Phontomask Technology and Management, 2002.