Chacterization and etching of sputter deposited absorber films for extreme ultraviolet lithography (EUVL) masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 883-892

  Racette, Kenneth C ^a   Williams, Carey T ^a   Lercel, Michael J ^a  

^a IBM   (United States)

Author keywords

Absorber; Chromium; Etch; EUVL; Extreme ultraviolet lithography; Next generation lithography; Sputter deposition; TaNx; Tantalum nitride

Indexed keywords

CHROMIUM; ETCHING; FUSED SILICA; IMAGE ANALYSIS; MULTILAYERS; PHOTOLITHOGRAPHY; SPUTTER DEPOSITION; STOICHIOMETRY; STRESS ANALYSIS; ULTRAVIOLET RADIATION;

ABSORBER FILMS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 0035766047     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.458253     Document Type: Conference Paper

References (3)

1. P. Mangat, S. Hector, S. Rose, G. Cardinale, E. Tejnil, A. Stivers, "EUV Mask Fabrication with Cr absorber," Proc. SPIE 3997, 76-82, 2000.
2. P. Yan, G. Zhang, A. Ma, T. Liang, "TAN EUVL Mask Fabrication and Characterization," Proc. SPIE, 4343, 409-414, 2001.
3. M. Takahashi, T. Ogawa, E. Hoshino, H. Hoko, B.T. Lee, A. Chiba, H. Yamanashi, S. Okazaki, "Tantalum nitride films for the absorber material of reflective-type EUVL mask," Proc. SPIE, 4343, 760-763, 2001.