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Volumn 4688, Issue 1, 2002, Pages 161-172

Status of fabrication of square format masks for extreme ultraviolet lithography (EUVL) at the MCoC

Author keywords

45 nm; Absorber; Buffer; Chromium; Etch; EUVL; NGL

Indexed keywords

ABSORPTION; ELECTRON BEAMS; MASKS; PHOTOLITHOGRAPHY;

EID: 0036378992     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472286     Document Type: Conference Paper
Times cited : (3)

References (6)
  • 3
    • 0034763986 scopus 로고    scopus 로고
    • TaN EUVL mask fabrication and characterization
    • P. Yan, G. Zhang, A. Ma, T. Liang, "TaN EUVL Mask Fabrication and Characterization," Proc. SPIE, 4343, 409-414, 2001
    • (2001) Proc. SPIE , vol.4343 , pp. 409-414
    • Yan, P.1    Zhang, G.2    Ma, A.3    Liang, T.4
  • 4
    • 0010493799 scopus 로고    scopus 로고
    • Characterization and etching of sputter deposited absorber films for extreme ultraviolet lithography (EUVL) masks
    • K. Racette, C. Williams, M. Lercel, "Characterization and etching of sputter deposited absorber films for extreme ultraviolet lithography (EUVL) masks," BACUS Proc., 2001
    • (2001) BACUS Proc.
    • Racette, K.1    Williams, C.2    Lercel, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.