Interfacial reactions and electrical characteristics in Ti/SiGe/Si(100) contact systems

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 317-320

  Kojima, J ^a   Zaima, S ^a   Shinoda, H ^a   Iwano, H ^a   Ikeda, H ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Contact resistance; Electrical property; Interfacial reaction; Schottky barrier height; Ti SiGe Si system

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM; X RAY DIFFRACTION ANALYSIS;

CONTACT RESISTANCE; SCHOTTKY BARRIER HEIGHT (SBH); SOLID PHASE REACTIONS;

OHMIC CONTACTS;

EID: 0031548439     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80101-8     Document Type: Article

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