A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1474-1476

  Guliants, Elena A ^a   Ji, Chunhai ^a   Song, Young J ^a   Anderson, Wayne A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISILICIDES; FORMING GAS; FRONT SURFACES; METAL-INDUCED GROWTHS; ORDERS OF MAGNITUDE; POLYCRYSTALLINE-SI; RECTIFICATION RATIO; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SI ATOMS; SI FILMS;

DIODES; EPITAXIAL GROWTH; OHMIC CONTACTS; POLYSILICON; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956022165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454214     Document Type: Article

References (6)

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