Optimization of silicon-germanium TFT's through the control of amorphous precursor characteristics

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1690-1695

  Subramanian, Vivek ^a,b   Saraswat, Krishna C ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Chemical vapor deposition; Liquid crystal displays; Optimization methods; Silicon germanium; Thin film transistors

Indexed keywords

AMORPHOUS MATERIALS; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

INTEGRATED DRIVER TRANSISTORS; RESPONSE SURFACE CHARACTERIZATION;

THIN FILM TRANSISTORS;

EID: 0032142165     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704366     Document Type: Article

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