Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate

Thin Solid Films

Volumn 293, Issue 1-2, 1997, Pages 310-314

  Qi, Wen Jie ^a   Li, Bing Zong ^a   Jiang, Guo Bao ^a   Gu, Zhi Guang ^a   Kwok, T K ^a,c   Zhang, R J ^b   Chu, P K ^b  

^a FUDAN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Growth mechanism; Solid phase epitaxy; Sputtering; Structural properties

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; OXIDATION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030682305     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09112-2     Document Type: Article

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