Study on recrystallisation of low temperature grown silicon-germanium films for thin film transistor applications

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 496-498

  Kao, H L ^a   Yang, S Y ^a   Hong, J W ^a  

^a NONE

Author keywords

Silicon germanium; Thin film transistors

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; MORPHOLOGY; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACES; THIN FILM TRANSISTORS;

DOPANT ACTIVATION; FURNACE ANNEALING; RECRYSTALLIZATION; SILICON GERMANIUM FILMS;

AMORPHOUS FILMS;

EID: 0030085361     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960325     Document Type: Article

References (8)

1. KING, T.-J., and SARASWAT, K.C.: 'Deposition and properties of low-pressure chemical-vapor deposited polycrystalline silicongermanium films', J. Electrochem. Soc., 1994, 141, (8), pp. 2235-2241
2. PEARSALL, T.P.: 'Silicon-germanium alloys and heterostructures: optical and electronic properties', CRC Crit. Rev. Solid State Mater. Sci., 1989, 15, (6), pp. 551-609
3. KAMINS, T.I., and MEYER, D.J.: 'Kinetics of silicon-germanium deposition by atmospheric-pressure chemical vapor deposition', Appl. Phys. Lett., 1991, 59, (7), pp. 178-180
4. MEYERSON, B.S., URAM, K.J., and LEGOUES, F.K.: 'Cooperative growth phenomena in silicon/germanium low-temperature epitaxy', Appl. Phys. Lett., 1988, 53, (25), pp. 2555-2557
5. x thin-film transistors by ultrahigh vacuum chemical vapor deposition', Appl. Phys. Lett., 1994, 65, pp. 1700-1702
6. JURICHICH, S., KING, T.-J., SARASWAT, K., and MEHLHAFF, J.: 'Low thermal budge polycrystalline silicon-germanium thin-film transistors fabricated by rapid thermal annealing', Jpn. J. Appl. Phys., 1994, 33, pp. L1139-L1141
7. TANAKA, K.: 'Glow-discharge hydrogenated amorphous silicon' (KTK Scientific Publishers, 1989), Chap. 3
8. SARCONA, G., HATALIS, M.K., and CATALANO, A.: 'Amorphous silicon and silicon-germanium thin-film transistors formed by implantation'. Mater. Res. Soc. Symp. Proc., 1993, 297, pp. 907-912