Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Materials Letters

Volumn 57, Issue 4, 2002, Pages 921-924

  Ru, Guo Ping ^a   Qu, Xin Ping ^a   Gu, Qiang ^a   Qi, Wen Jie ^a   Li, Bing Zong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Dopant diffusion; Ion beam sputtering deposition; SiGe

Indexed keywords

BORON; CRYSTALLIZATION; DIFFUSION; HALL EFFECT; ION BEAM ASSISTED DEPOSITION; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; THERMAL EFFECTS;

DOPANT DIFFUSION;

SEMICONDUCTING FILMS;

EID: 0036896573     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00896-0     Document Type: Article

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