Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 403-407

  Horváth, Zs J ^a   Jarrendahl K ^b   Adam M ^a   Szabo I ^a   Van Tuyen, Vo ^a   Czigány, Zs ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Amorphous; Electrical behaviour; Schottky barrier; Si; SiGe; Superlattice

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL MICROSTRUCTURE; MAGNETRON SPUTTERING; MULTILAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; SUPERLATTICES;

SCHOTTKY CONTACTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037042012     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00905-9     Document Type: Article

References (10)