Refractive index study of AlxGa1-xN films grown on sapphire substrates

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 2980-2991

  Sanford, N A ^a   Robins, L H ^b   Davydov, A V ^b   Shapiro, A ^b   Tsvetkov, D V ^c   Dmitriev, A V ^c   Keller, S ^d   Mishra, U K ^d   DenBaars, S P ^d  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c TDI Inc   (United States)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPOR PHASE EPITAXY; X RAY SPECTROSCOPY;

SECONDARY FLUORESCENCE;

THIN FILMS;

EID: 0141522822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598276     Document Type: Article

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