Comparative study of HVPE-and MOCVD-grown nitride structures for UV lasing application

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Lam, J B ^a   Gainer, G H ^a   Bidnyk, S ^a   Elgawadi, Amal ^a   Park, G H ^a   Krasinski, J ^a   Song, J J ^a   Tsvetkov, D V ^a   Dmitriev, V A ^a  

^a Zenastra Photonics Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STIMULATED EMISSION; ULTRAVIOLET SPECTROSCOPY; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE MEASUREMENT;

NITRIDES;

EID: 0035560306     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)