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Volumn 177, Issue 1, 2000, Pages 157-163
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Characterization of AlxGa1-xN-compound layers by reflectance difference spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
COMPUTER SIMULATION;
CRYSTAL LATTICES;
CRYSTAL SYMMETRY;
ENERGY GAP;
INTERFACES (MATERIALS);
LIGHT REFLECTION;
NITRIDES;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SILICON CARBIDE;
SPECTROSCOPY;
ALUMINUM GALLIUM NITRIDE;
REFLECTANCE DIFFERENCE SPECTROSCOPY;
SEMICONDUCTING FILMS;
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EID: 0033904478
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(200001)177:1<157::AID-PSSA157>3.0.CO;2-P Document Type: Article |
Times cited : (4)
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References (17)
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