Microstructures of GaN islands on a stepped sapphire surface

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4233-4237

  Kim, C C ^a   Je, J H ^a   Ruterana, P ^b   Degave, F ^b   Nouet, G ^b   Yi, M S ^c   Noh, D Y ^c   Hwu, Y ^d  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LABORATOIRE CRISMAT   (France)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; C-PLANE SAPPHIRE; COMPRESSIVE STRAIN; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN ISLANDS; GAN/SAPPHIRE; GROWTH STAGES; INTERFACIAL STRUCTURES; NUCLEATION LAYERS; SAPPHIRE SURFACE; SMALL ISLAND; STACKING ORDER; STRUCTURAL EVOLUTION; SYNCHROTRON X-RAY SCATTERING;

GALLIUM NITRIDE;

SAPPHIRE;

EID: 0036536634     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459607     Document Type: Article

References (17)

1. S. Nakamura, M. Senoh, and T. Mukai, Appl. Phys. Lett. 62, 2390 (1993). apl APPLAB 0003-6951
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998). apl APPLAB 0003-6951
3. M. A. Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995). apl APPLAB 0003-6951
4. O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 69, 3872 (1996). apl APPLAB 0003-6951
5. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991). jjc JAPLD8 0021-4922
6. H. Amano, N. Sawaki, Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986). apl APPLAB 0003-6951
7. S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 68, 1525 (1996). apl APPLAB 0003-6951
8. X. J. Ning, F. R. Chien, P. Pirouz, J. W. Yang, and M. A. Khan, J. Mater. Res. 11, 580 (1996). jmr JMREEE 0884-2914
9. P. Fini, X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. DenBaars, and J. S. Speck, Jpn. J. Appl. Phys., Part 1 37, 4460 (1998). jjb JAPNDE 0021-4922
10. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 189/190, 231 (1998). jcr JCRGAE 0022-0248
11. V. Narayanan, K. Lorenz, W. Kim, and S. Mahajan, Appl. Phys. Lett. 78, 1544 (2001). apl APPLAB 0003-6951
12. M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Lshiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto, Appl. Phys. Lett. 67, 2615 (1995). apl APPLAB 0003-6951
13. J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, and H. Morkoc, MRS Internet J. Nitride Semicond. Res. 5, 7 (2000). mrj MIJNF7 1092-5783
14. C. C. Kim, J. H. Je, M. S. Yi, D. Y. Noh, and P. Ruterana, J. Appl. Phys. 90, 2191 (2001). jap JAPIAU 0021-8979
15. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, New York, 1997), Chap. 3.
16. K. Lorenz, M. Gonsalvez, W. Kim, V. Naranayan, and S. Mahajan, Appl. Phys. Lett. 77, 3391 (2000). apl APPLAB 0003-6951
17. For a general review on diffraction from systems with stacking faults, refer to B. E. Warren, X-Ray Diffraction (Addison-Wesley, Reading, MA, 1969), Chap. 13.