Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 325-329

  Nikitina, I ^a   Mosina, G ^a   Melnik, Yu ^b,c   Nikolaev, A ^a   Vassilevski, K ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Crystal Growth Research Center   (Russian Federation)

^c TDI Inc   (United States)

Author keywords

Dislocations; Gallium nitride; Silicon carbide; Transmission electron microscopy

Indexed keywords

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY;

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); HYDRIDES; NITRIDES; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0039765211     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00527-3     Document Type: Article

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