Anomalous B penetration through ultrathin gate oxides during rapid thermal annealing

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 466-469

  Fair, Richard B ^a  

^a Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; OXIDES; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MODELS;

ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0032595846     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784454     Document Type: Article

References (20)

1. K. Suzuki, A. Satoh, T. Aoyama, I. Namura, F. Inoue, Y. Kataoka, Y. Tada, and T. Sugii, "Thermal budget for fabricating a dual gate deep-submicron CMOS with thin pure gate oxide," Jpn. J. Appl. Phys., vol. 36, p. 1496, 1996.
2. R. B. Fair, "Concentration profiles of diffused dopants in silicon," in Impurity Doping Processes in Silicon, F. Y. Wang, Ed. Amsterdam, The Netherlands: North Holland, Material Processing: Theory and Practices, 1981, pp. 317-442.
3. A. Kalnitsky, R. Frijns, J. van Herk, M.-T. Basso, A. Granier, P. Delpech, M. Haond, A. Grouillet, and D. Mathiot, "B penetration through poly-Si by channeling in a submicron CMOS process," in Spring Meeting Electrochem. Soc., Los Angeles, CA, May 1996.
4. B. Zhang, D. M. Maher, M. S. Denker, and M. A. Ray, "Stability of ultrathin gate oxides with boron doped polysilicon gate structures after rapid thermal annealing," in Rapid Thermal and Integrated Processing II, J. Gelpy, J. K. Elliot, J. J. Wortman, and A. Ajmera, Eds. Pittsburgh, PA: Materials Res. Soc., 1993, vol. 303, p. 247.
5. + -poly gate PMOS devices," in Spring Meeting Electrochem. Soc., San Diego, CA, May 1998.
6. 2," in Silicon Nitride and Silicon Dioxide Thin Insulating Films, V. J. Kapoor and W. D. Brown, Eds. Pennington, NJ: The Electrochem. Soc., 1994, p. 295.
7. + polycrystalline silicon and boron penetration," in IEDM Tech. Dig., 1997, p. 627.
8. T. Aoyama, K. Suzuki, H. Tashiro, Y. Toda, T. Yamazaki, Y. Arimoto, and T. Ito, "Boron diffusion through pure silicon oxide and oxynitride used for metal-oxide-semiconductor devices," J. Electrochem. Soc., vol. 140, p. 3624, 1993.
9. + Si gate technology," IEEE Electron Device Lett., vol. 17, p. 242, 1996.
10. A. R. Acker, M. R. Mirabedini, M. C. Highes, S. A. Craig, H. H. Heinisch, D. Venables, and J. J. Wortman, "Boron-doped polysilicon gate electrodes for scaled CMOS devices with thin gate oxides," in Spring Meeting Electrochem. Soc., San Diego, CA, May 1998.
11. T. Aoyama, K. Suzuki, Y. Toda, T. Yamazaki, K. Takashi, and T. Ito, "Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride," J. Appl. Phys., vol. 77, p. 417, 1995.
12. M. Cao, P. Vande Voorde, M. Cox, S.-Y. Oh, and W. Greene, "Boron diffusion and penetration in ultra-thin oxide with poly-Si gate," IEEE Electron Device Lett., vol. 19, p. 291, 1998.
13. + polysilicon-gated ultra thin oxides (21-26 Å)," in 1997 Symp. VLSI Technol. Dig. Tech. Papers, p. 149.
14. M. Rodder, M. Hanratty, D. Rogers, T. Laaksonen, J. C. Hu, S. Murtaza, C.-P. Chao, S. Hattangady, S. Aur, A. Amerasekera, and I.-C. Chen, in IEDM Tech. Dig., 1997, p. 223.
15. H. P. Tuinhout, A. H. Montree, J. Schmitz, and P. A. Stolk, in IEDM Tech. Dig., 1997, p. 631.
16. R. B. Fair, "Physical models of boron diffusion in ultrathin gate oxides," J. Electrochem. Soc., vol. 144, p. 708, 1997.
17. T. Aoyama, S. Ohkubo, H. Tashiro, Y. Tada, K. Suzuki, and K. Horiuchi, "Boron diffusion in nitrided gate dielectrics leading to high suppression of boron penetration in P-MOSFET's," in Ext. Abstr. 1997 Int. Conf. Solid State Device Materials, Sept. 1997, p. 398.
18. A. H. Edwards and W. B. Fowler, "Theory of the peroxy-radical-defect in a-SiO2," Phys. Rev. B, vol. 26, p. 6649, 1982.
19. G. Chen, unpublished.
20. A. G. Dutov, S. V. Shiryaev, and T. T. Samojlyuk, "Effect of fluorine on radiation-enhanced diffusion, radiation resistance, and threshold voltages of MOS structures," Mikroelektronika, vol. n1, p. 27, 1993.