Comparison of ultra-shallow junctions with PLAD and beamline implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 488-491

  Felch, S B ^a   Arevalo, E A ^a   Walther, S ^a   Fang, Z ^a   Koo, B W ^a   Liebert, R ^a   Lenoble, D ^b   Grouillet, A ^b  

^a Varian Semiconductor Equipment Associates Inc   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BEAMLINE IMPLANTATION; BEAMLINE IMPLANTS; COMPARATIVE STUDIES; DEVICE PERFORMANCE; DOPANT PROFILE; JUNCTION DEPTH; N-TYPE DOPING; P-TYPE DOPING; PROCESS FLOWS; PULSED PLASMA DOPING; SIMS PROFILE; SOURCE/DRAIN EXTENSION; ULTRA SHALLOW JUNCTION;

ANNEALING; ELECTRIC RESISTANCE; SEMICONDUCTOR DOPING;

ION IMPLANTATION;

EID: 78649851560     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924194     Document Type: Conference Paper

References (10)

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3. R. Liebert, S. Walther, S. Felch, Z. Fang, B. Pedersen and D. Hacker, "Plasma Doping System for 300mm Wafers," these Proceedings.
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5. E. Ishida, D.F. Downey, K.S. Jones, and J. Liu, "The Chemical Effect of Fluorine on Boron Transient Enhanced Diffusion," 1998 Int. Conf. on Ion Implantation Technology Proc, 1999, pp. 909-912. (Pubitemid 30520050)
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7. B. Murto, "Recent Advances and Continuing Challenges in Ultra-Shallow Junctions," Proc. of Third National Implant Users Meeting, Oct. 21,1999.
8. D. Lenoble, F. Amaud, A. Grouillet, R. Liebert, S. Walther, S.B. Felch, Z. Fang, and M. Haond, "Reliable and Enhanced Performances of sub-0.1μm pMOSFETs Doped by Low Biased Plasma Doping," VLSI Tech. Dig., 2000, p. 110.
9. 3 Plasma Doped Gate/Source/Drain and S/D Extension," Tech. Dig. of IEDM, 1998, pp. 639-642.
10. GC-F. Yeap, S.B. Felch, D. Bang, B. Lee, and M-R. Lin, "High Performance sub-0.2μm Gate Length pMOSFETs with Source/Drain Extensions Fabricated by Plasma Doping," 1998 Int. Conf. on Ion Implantation Technology Proc, 1999, pp. 114-117.