The effect of impurities on diffusion and activation of ion implanted boron in silicon

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Robertson, L S ^a   Brindos, R ^a   Jones, K S ^a   Law, M E ^a   Downey, D F ^a   Falk, S ^a   Liu, J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COMPOSITION EFFECTS; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; HALL EFFECT; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI WAFER; DOPANT; NON METALLIC IMPURITIES;

SEMICONDUCTING BORON;

EID: 0034438944     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)