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Journal of Electronic Materials

Volumn 30, Issue 10, 2001, Pages 1353-1360

Formation of ohmic contacts to α-SiC and their impact on devices

(1) Madsen, L D a

a CARNEGIE MELLON UNIVERSITY (United States)

Author keywords

Devices; Ohmic contacts; Silicon carbide; SiC

Indexed keywords

CHEMICAL CLEANING; DEPOSITION; ELECTRIC BREAKDOWN; ENERGY GAP; ETCHING; INTERFACES (MATERIALS); OHMIC CONTACTS; PASSIVATION; POWER ELECTRONICS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY;

EPITAXIAL MATERIALS;

SILICON CARBIDE;

EID: 0035485141 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0124-x Document Type: Article

Times cited : (18)

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