On the electrical monitor for device degradation in the CHISEL stress regime

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 357-359

  Driussi, F ^a   Esseni, David ^a   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

CHannel initiated secondary electron (CHISEL); Degradation model; Electrical monitor; Hot carrier degradation; Substrate bias

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; HOT CARRIERS; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES;

CHANNEL INITIATED SECONDARY ELECTRON; DEVICE DEGRADATION; ELECTRIC MONITOR; HOT CARRIER DEGRADATION; SUBSTRATE BIAS;

MOSFET DEVICES;

EID: 0042173079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812552     Document Type: Article

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