A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurement

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 299-301

  Ang, D S ^a   Ling, C H ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING;

CHARGE PUMPING (CP) MEASUREMENTS;

MOSFET DEVICES;

EID: 0031162374     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585365     Document Type: Article

References (14)

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