Study of secondary electron injection phenomena in deep sub-micron MOSFETs and flash cells

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 144-147

  Xue, G ^b   Van Houdt, J ^a   Wellekens, D ^a   Haspeslagh, L ^a   Lorenzini, M ^a   Keppens, B ^a   Maes, H ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; ELECTRON INJECTION; ELECTRONS; MOSFET DEVICES; SECONDARY EMISSION; SOLID STATE DEVICES;

CHARGE PUMPING; DEEP SUB-MICRON; EMBEDDED APPLICATION; FLASH MEMORY CELL; GATE INJECTION; INTERFACE TRAPS; SECONDARY ELECTRONS; SPLIT-GATE FLASHES;

FLASH MEMORY;

EID: 0005855304     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194735     Document Type: Conference Paper

References (7)

1. S. Lai, IEDM Tech. Dig. 1998, 971
2. J. Bude et al IEDM Tech. Dig. 1995 pp.989
3. G. Groeseneken et al. IEEE TED 1984 pp.42
4. M.G. Ancona et al, IEEE TED, 1988 pp.2221
5. J. Van Houdt et al IEEE TED 1992 pp.1150
6. J. Van Houdt et al IEEE TED 1993 pp.2255
7. Sohrab Kianian et al, Symp. on VLSI Tech., Tech Dig. 1994 pp.71