Microscopic analysis of the impact of substrate bias on the gate current of pMOSFETs

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 106-109

  Zanchetta, S ^a   Esseni, D ^a   Palestri, P ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DEVICES;

CARRIER HEATING; DEEP SUB-MICRON; DIFFERENT SUBSTRATES; FULL BAND MONTE CARLO SIMULATION; MICROSCOPIC ANALYSIS; NUMERICAL INVESTIGATIONS; PMOS TRANSISTORS; SUBSTRATE BIAS;

SUBSTRATES;

EID: 11144220564     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984450     Document Type: Conference Paper

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