A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Solid-State Electronics

Volumn 42, Issue 9, 1998, Pages 1679-1687

  Simoen, E ^a   Decoutere, S ^a   Claeys, C ^a,b   Deferm, L ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTORS (BJT); HOT-CARRIER STRESS;

BIPOLAR TRANSISTORS;

EID: 0032166424     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00131-2     Document Type: Article

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