Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

Microelectronics Reliability

Volumn 40, Issue 11, 2000, Pages 1863-1867

  Sandén, Martin ^a   Malm, B Gunnar ^a   Grahn, Jan V ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; SPURIOUS SIGNAL NOISE;

FORMING GAS ANNEALING (FGA); HYDROGEN PASSIVATIONS; POLYSILICON-MONOSILICON INTERFACES;

MICROELECTRONICS;

EID: 0034325321     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00052-4     Document Type: Article

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