메뉴 건너뛰기




Volumn 41, Issue 2, 2001, Pages 265-271

Low-frequency noise in single-poly bipolar transistors at low base current density

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC SPACE CHARGE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

EID: 0035124315     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00197-9     Document Type: Article
Times cited : (4)

References (22)
  • 1
    • 0028549703 scopus 로고
    • Low frequency noise in modern bipolar transistors impact of intrinsic transistor and parasitic series resistances
    • Kleinpenning T. Low frequency noise in modern bipolar transistors impact of intrinsic transistor and parasitic series resistances. IEEE Trans Electron Dev. 41(11):1994;1981-1991.
    • (1994) IEEE Trans Electron Dev , vol.41 , Issue.11 , pp. 1981-1991
    • Kleinpenning, T.1
  • 2
    • 0026907852 scopus 로고
    • Strong low frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilites
    • Lau W.S., Chor E.F., Foo C.S., Khong W.C. Strong low frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilites. Jpn J Appl Phys. 31(8):1992;1021-1023.
    • (1992) Jpn J Appl Phys , vol.31 , Issue.8 , pp. 1021-1023
    • Lau, W.S.1    Chor, E.F.2    Foo, C.S.3    Khong, W.C.4
  • 3
    • 0001317838 scopus 로고    scopus 로고
    • On the origin of 1/f noise in polysilicon emitter bipolar tansistors
    • Deen M., Rumyantsev S., Schroter M. On the origin of. 1/f noise in polysilicon emitter bipolar tansistors J Appl Phys. 85(2):1999;1192-1195.
    • (1999) J Appl Phys , vol.85 , Issue.2 , pp. 1192-1195
    • Deen, M.1    Rumyantsev, S.2    Schroter, M.3
  • 4
    • 0000180507 scopus 로고    scopus 로고
    • Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors
    • Deen M., Rumyantsev S., Bashir R., Taylor R. Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors. J Appl Phys. 84(1):1998;625-633.
    • (1998) J Appl Phys , vol.84 , Issue.1 , pp. 625-633
    • Deen, M.1    Rumyantsev, S.2    Bashir, R.3    Taylor, R.4
  • 5
    • 0030391897 scopus 로고    scopus 로고
    • Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors
    • Simoen E., Decoutere S., Cuthbertson A., Claeys L., Deferm L. Impact of polysilicon emitter interfacial layer engineering on the. 1/f noise of bipolar transistors IEEE Trans Electron Dev. 43(12):1996;2261-2268.
    • (1996) IEEE Trans Electron Dev , vol.43 , Issue.12 , pp. 2261-2268
    • Simoen, E.1    Decoutere, S.2    Cuthbertson, A.3    Claeys, L.4    Deferm, L.5
  • 7
    • 0001049373 scopus 로고
    • Low frequency noise in polysilicon-emitter bipolar junction transistors
    • Deen M., Ilowski J., Ping Y. Low frequency noise in polysilicon-emitter bipolar junction transistors. J Appl Phys. 77(12):1995;6278-6288.
    • (1995) J Appl Phys , vol.77 , Issue.12 , pp. 6278-6288
    • Deen, M.1    Ilowski, J.2    Ping, Y.3
  • 8
    • 0000109768 scopus 로고    scopus 로고
    • Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
    • Llinares P., Celi D., dit buission O.R., Ghibaudo G., Chroboczek J. Dimension scaling of. 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors J Appl Phys. 82(5):1997;2671-2675.
    • (1997) J Appl Phys , vol.82 , Issue.5 , pp. 2671-2675
    • Llinares, P.1    Celi, D.2    Dit Buission, O.R.3    Ghibaudo, G.4    Chroboczek, J.5
  • 9
    • 0029378964 scopus 로고
    • Low-frequency noise sources in polysilicon emitter BJT's: Influence of hot-electron-induced degradation and post-stress recovery
    • Mounib A., Balestra F., Mathieu N., Brini J., Ghibaudo G., Chovet A., Chantre A., Nouailhat A. Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery. IEEE Trans Electron Dev. 42(9):1995;1647-1652.
    • (1995) IEEE Trans Electron Dev , vol.42 , Issue.9 , pp. 1647-1652
    • Mounib, A.1    Balestra, F.2    Mathieu, N.3    Brini, J.4    Ghibaudo, G.5    Chovet, A.6    Chantre, A.7    Nouailhat, A.8
  • 10
    • 0000109767 scopus 로고    scopus 로고
    • On noise sources in hot electron-degraded bipolar junction transistors
    • Llinares P., Ghibaudo G., Chroboczek J. On noise sources in hot electron-degraded bipolar junction transistors. J Appl Phys. 82(5):1997;2676-2679.
    • (1997) J Appl Phys , vol.82 , Issue.5 , pp. 2676-2679
    • Llinares, P.1    Ghibaudo, G.2    Chroboczek, J.3
  • 11
    • 0032166424 scopus 로고    scopus 로고
    • A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
    • Simeon E., Decoutere S., Clayes C., Deferm L. A global description of the base current. 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress Solid-State electron. 42(9):1998;1679-1687.
    • (1998) Solid-State Electron , vol.42 , Issue.9 , pp. 1679-1687
    • Simeon, E.1    Decoutere, S.2    Clayes, C.3    Deferm, L.4
  • 12
    • 0021784606 scopus 로고
    • 1/f noise in bipolar transistors
    • Green C., Jones B. 1/f noise in bipolar transistors J Phys D: Appl Phys. 18:1985;77-91.
    • (1985) J Phys D: Appl Phys , vol.18 , pp. 77-91
    • Green, C.1    Jones, B.2
  • 16
    • 0029291962 scopus 로고
    • Low frequency noise in polysilicon emitter biploar transistors
    • Markus H., Kleinpenning T. Low frequency noise in polysilicon emitter biploar transistors. IEEE Trans Electron Dev. 42(4):1995;720-727.
    • (1995) IEEE Trans Electron Dev , vol.42 , Issue.4 , pp. 720-727
    • Markus, H.1    Kleinpenning, T.2
  • 17
    • 0000043813 scopus 로고
    • Location of low frequency noise sources in submicrometer bipolar transistors
    • Keinpenning T. Location of low frequency noise sources in submicrometer bipolar transistors. IEEE Trans Electron Dev. 39(6):1992;1501-1506.
    • (1992) IEEE Trans Electron Dev , vol.39 , Issue.6 , pp. 1501-1506
    • Keinpenning, T.1
  • 18
    • 0000373473 scopus 로고    scopus 로고
    • Low frequency ( 1/f ) noise model for the base current in polysilicon emitter bipolar transistors
    • Mounib A., Ghibaudo G., Balestra F., Pongany D., Chantre A., Chroboczek J. Low frequency (. 1/f ) noise model for the base current in polysilicon emitter bipolar transistors J Appl Phys. 79(6):1996;3330-3336.
    • (1996) J Appl Phys , vol.79 , Issue.6 , pp. 3330-3336
    • Mounib, A.1    Ghibaudo, G.2    Balestra, F.3    Pongany, D.4    Chantre, A.5    Chroboczek, J.6
  • 19
    • 0022783948 scopus 로고
    • Location of 1/f noise sources in BJT's and HBJT's. I. Theory
    • Ziel A., Zhang X., Pawlikiewicz A. Location of. 1/f noise sources in BJT's and HBJT's. I. Theory IEEE Trans Electron Dev. 33(9):1986;1371-1376.
    • (1986) IEEE Trans Electron Dev , vol.33 , Issue.9 , pp. 1371-1376
    • Ziel, A.1    Zhang, X.2    Pawlikiewicz, A.3
  • 20
    • 0032681851 scopus 로고    scopus 로고
    • Crowding effects and low frequency noise in polysilicon emitter bipolar transistors
    • Routoure J., Lepaisant J., Bloyet D., Bardy S., Lebailly J. Crowding effects and low frequency noise in polysilicon emitter bipolar transistors. Solid-State Electron. 43:1999;931-936.
    • (1999) Solid-State Electron , vol.43 , pp. 931-936
    • Routoure, J.1    Lepaisant, J.2    Bloyet, D.3    Bardy, S.4    Lebailly, J.5
  • 22
    • 0023421533 scopus 로고
    • Location of 1/f noise sources in BJT's. II. Experiment
    • Pawlikiewicz A., Ziel A. Location of. 1/f noise sources in BJT's. II. Experiment IEEE Trans Electron Dev. 34(9):1987;2009-2012.
    • (1987) IEEE Trans Electron Dev , vol.34 , Issue.9 , pp. 2009-2012
    • Pawlikiewicz, A.1    Ziel, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.