Recent advances in III-Nitride materials, characterization and device applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3179, Issue , 1997, Pages 2-11

  Razeghi, M ^a   Zhang, X ^a   Kung, P ^a   Saxler, A ^a   Walker, D ^a   Lim, K Y ^a,b   Kim, K S ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Chonbuk National University   (South Korea)

Author keywords

AlGaN photoconductors; AlGaN supperlattice; III nitrides; Metal insulator semiconductor capacitor; Optical pumping; Photoluminescence; Si doping; Stimulated emission; Ultraviolet photodetectors; X ray rocking curve

Indexed keywords

ALGAN PHOTOCONDUCTORS; ALGAN SUPPERLATTICE; III-NITRIDES; SI-DOPING; ULTRAVIOLET PHOTODETECTORS; X-RAY ROCKING CURVE;

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTALS; DIELECTRIC DEVICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; GALLIUM NITRIDE; GERMANIUM; LIGHT EMISSION; LUMINESCENCE; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; STIMULATED EMISSION; SUBSTRATES;

GALLIUM ALLOYS;

EID: 0041498418     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.276195     Document Type: Conference Paper

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