Selective etching of Al/AlN structures for metallization of surface acoustic wave devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 843-848

  Engelmark, Fredrik ^a   Iriarte, G F ^a   Katardjiev, I V ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM NITRIDE; ANISOTROPY; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; METALLIZING; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SILICA; THIN FILMS;

SELECTIVE ETCHING;

PLASMA ETCHING;

EID: 0035998508     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1470511     Document Type: Conference Paper

References (27)

1. 2ICP plasmas
2. ICP dry etching of III-V nitrides
3. Dry etching of III-V nitrides
4. Selective and non-selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
5. Reactive ion etching of piezoelectric films for acoustic wave devices