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Volumn 42, Issue 5 A, 2003, Pages 2573-2577

Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition

Author keywords

AFM; Dark spot; GaN; Mobility; MOCVD; Threading dislocation; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EID: 0038719163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2573     Document Type: Article
Times cited : (7)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.