Fabrication of multilayered SiOCH films with low dielectric constant employing layer-by-layer process of plasma enhanced chemical vapor deposition and oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2775-2779

  Nagai, Hisao ^a   Hori, Masaru ^a   Goto, Toshio ^a   Fujii, Toshiaki ^b   Hiramatsu, Mineo ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Layer by layer process; Low k film; PECVD; Plasma oxidation; SiOCH

Indexed keywords

CHEMICAL BONDS; ELECTRIC INSULATING MATERIALS; MONOMERS; MULTILAYERS; OXIDATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; ULSI CIRCUITS;

INSULATING FILMS;

THIN FILMS;

EID: 0038718999     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2775     Document Type: Article

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