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Volumn 6, Issue 3, 1998, Pages 232-240

Formation of low-dielectric-constant interlayer films by plasma-enhanced chemical vapor deposition employing hexamethyldisiloxane

Author keywords

HMDSO; Low dielectric constant; Multilevel interconnection; PECVD

Indexed keywords

COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS TRANSITION; OPTICAL INTERCONNECTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

EID: 23844472771     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (10)
  • 1
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    • Physical properties and microelectronic applications of low permittivity fluoromethyl cyanate resins
    • L. J. Buckley and A. W. Snow. 1997. "Physical Properties and Microelectronic Applications of Low Permittivity Fluoromethyl Cyanate Resins." J. Vac. Sci. Technol., B15:259-266.
    • (1997) J. Vac. Sci. Technol. , vol.B15 , pp. 259-266
    • Buckley, L.J.1    Snow, A.W.2
  • 2
    • 0031144477 scopus 로고    scopus 로고
    • Development of a low permittivity fluorinated copolymer for interlevel dielectric applications
    • L. J. Buckley and A. W. Snow. 1997. "Development of a Low Permittivity Fluorinated Copolymer for Interlevel Dielectric Applications." J. Vac. Sci. Technol., B15:741-745.
    • (1997) J. Vac. Sci. Technol. , vol.B15 , pp. 741-745
    • Buckley, L.J.1    Snow, A.W.2
  • 3
    • 23844446885 scopus 로고    scopus 로고
    • Gap fill dependence of fluorinated polyimide films on solid content, adhesion promoter, spin dwell time, and solvent spray
    • S.-Q. Wang and B. Zhao. 1996. "Gap Fill Dependence of Fluorinated Polyimide Films on Solid Content, Adhesion Promoter, Spin Dwell Time, and Solvent Spray." J. Vac. Sci. Technol., B14:2656-2659.
    • (1996) J. Vac. Sci. Technol. , vol.B14 , pp. 2656-2659
    • Wang, S.-Q.1    Zhao, B.2
  • 5
    • 0346156338 scopus 로고
    • Low dielectric constant interlayer using fluorine-doped silicon oxide
    • T. Usami, K. Shimokawa and M. Yoshimaru. 1994. "Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide." Jpn. J. Appl. Phys., 33: 408-412.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 408-412
    • Usami, T.1    Shimokawa, K.2    Yoshimaru, M.3
  • 6
    • 0030108340 scopus 로고    scopus 로고
    • Intermetal dielectric gap fill by plasma enhanced chemical vapor deposited fluorine-doped silicon dioxide films
    • W. S. Yoo and R. Swope. 1996. "Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films." Jpn. J. Appl. Phys., 35:L273-L275.
    • (1996) Jpn. J. Appl. Phys. , vol.35
    • Yoo, W.S.1    Swope, R.2
  • 7
    • 84975376938 scopus 로고
    • A room temperature chemical vapor deposition SiOF film formation technology for the interlayer in submicron multilevel interconnections
    • T. Homma, R. Yamaguchi and Y. Murao. 1993. "A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnections." J. Electrochem. Soc., 140: 687-692.
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 687-692
    • Homma, T.1    Yamaguchi, R.2    Murao, Y.3
  • 10
    • 0001625841 scopus 로고    scopus 로고
    • Low-dielectric-constant film formation by oxygen-radical polymerization of laser-evaporated siloxane
    • T. Fujii, T. Yokoi, M. Hiramatsu, M. Nawata, M. Hori, T. Goto and S. Hattori. 1997. "Low-Dielectric-Constant Film Formation by Oxygen-Radical Polymerization of Laser-Evaporated Siloxane." J. Vac. Sci. Technol., B15:746-749.
    • (1997) J. Vac. Sci. Technol. , vol.B15 , pp. 746-749
    • Fujii, T.1    Yokoi, T.2    Hiramatsu, M.3    Nawata, M.4    Hori, M.5    Goto, T.6    Hattori, S.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.