Intermetal dielectric gap fill by plasma enhanced chemical vapor deposited fluorine-doped silicon dioxide films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

  Yoo, Woo Sik ^a   Swope, Richard ^a  

^a NOVELLUS SYSTEMS INC   (United States)

Author keywords

Dielectric; Fluorine doping; Gap fill; Intermetal dielectric; PECVD; TEOS; Voids

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DOPING (ADDITIVES); INTERMETALLICS; PLASMA APPLICATIONS; PRESSURE EFFECTS; SILICA; THERMAL EFFECTS; VAPORIZATION;

FLUORINE DOPED TETRA ETHOXY ORTHO SILICATE SILICON DIOXIDE FILMS; GAP FILLING CAPABILITY; INTERMETAL DIELECTRIC GAP FILL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DIELECTRIC FILMS;

EID: 0030108340     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l273     Document Type: Article

References (8)

1. D. Carl, D. Mordo, B. Sparks, M. Logan and J. Litter: Proc. 1st Int. VMIC Specialty Conf. on Dielectrics for ULSI Multilevel Interconnection (DUMIC) 1995, p. 234.
2. Y. Nishimoto, N. Tokumatsu, T. Fukuya and K. Maeda: Ext. Abstr. 19th Int. Conf. Solid State Devices and Materials, Tokyo, 1987 (Business Center for Academic Societies Japan, Tokyo, 1987) p. 447.
3. M. Hatanaka, Y. Mizushima, O. Hataishi and Y. Furumura: Proc. VLSI Multilevel Interconnection Conf., 1991, p. 435.
4. C. S. Pai, J. F. Miner and P. D. Foo: Proc. VLSI Multilevel Interconnection Conf., 1991, p. 442.
5. T. Usami, K. Shimokawa and M. Yoshimaru: Jpn. J. Appl. Phys. 33 (1994) 408.
6. T. Usami, K. Shimokawa and M. Yoshimaru: Ext. Abstr. 1993 Conf. Solid State Devices and Materials, Makuhari, 1993 (Business Center for Academic Societies Japan, Tokyo, 1993) p. 161.
7. D. Carl, S. Schuchmann, M. Kilgore, R. Swope and W. van den Hoek: Proc. 12th Int. Conf. VLSI Multilevel Interconnection, 1995, p. 97.
8. R. Swope and W. S. Yoo: submitted to Jpn. Appl. Phys. Lett.