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Volumn 85, Issue 10, 1999, Pages 7239-7243

Interfacial electrostatic phenomena and capacitance-voltage characteristics of ultrathin polyimide Langmuir-Blodgett films

(2) Itoh, Eiji a Iwamoto, Mitsumasa b

a SHINSHU UNIVERSITY (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATING MATERIALS; ELECTRON ENERGY LEVELS; ELECTROSTATICS; GOLD; INTERFACES (MATERIALS); LANGMUIR BLODGETT FILMS; POLYIMIDES; SURFACE PHENOMENA; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS;

PLASTIC FILMS;

EID: 0032620357 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370538 Document Type: Article

Times cited : (19)

References (13)

1
- 0003480204
- Elsevier, Amsterdam
- D. S. Soane and Z. Martynenko, Polyimide in Microelectronics-Fundamentals and Applications (Elsevier, Amsterdam, 1989).
- (1989) Polyimide in Microelectronics-Fundamentals and Applications
- Soane, D.S.¹ Martynenko, Z.²

2
- 0000912414
- edited by M. K. Ghosh and K. L. Mittal, Polyimides-Fundamentals and Applications Marcel Dekker, New York, Chap. 25
- M. Iwamoto and M. Kakimoto, Polyimide as Langmuir-Blodgett Films, edited by M. K. Ghosh and K. L. Mittal, Polyimides-Fundamentals and Applications (Marcel Dekker, New York, 1996), Chap. 25.
- (1996) Polyimide as Langmuir-Blodgett Films
- Iwamoto, M.¹ Kakimoto, M.²

3
- 0001442255
- M. Suzuki, M. Kakimoto, T. Konishi, Y. Imai, M. Iwamoto, and T. Hino, Chem. Lett. 1986, 395.
- Chem. Lett. , vol.1986 , pp. 395
- Suzuki, M.¹ Kakimoto, M.² Konishi, T.³ Imai, Y.⁴ Iwamoto, M.⁵ Hino, T.⁶

4
- 21544472952
- M. Iwamoto, A. Fukuda, and E. Itoh, J. Appl. Phys. 75, 1607 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 1607
- Iwamoto, M.¹ Fukuda, A.² Itoh, E.³

5
- 0013694085
- E. Itoh and M. Iwamoto, Appl. Phys. Lett. 68, 2714 (1996); J. Appl. Phys. 81, 1790 (1997).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2714
- Itoh, E.¹ Iwamoto, M.²

6
- 0000408042
- E. Itoh and M. Iwamoto, Appl. Phys. Lett. 68, 2714 (1996); J. Appl. Phys. 81, 1790 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 1790

7
- 36749113971
- A. J. Twarowski and A. C. Albrecht, J. Chem. Phys. 70, 2255 (1979).
- (1979) J. Chem. Phys. , vol.70 , pp. 2255
- Twarowski, A.J.¹ Albrecht, A.C.²

8
- 0001262281
- Y. Harima, K. Takeda, and K. Yamashita, J. Phys. Chem. Solids 56, 1223 (1995).
- (1995) J. Phys. Chem. Solids , vol.56 , pp. 1223
- Harima, Y.¹ Takeda, K.² Yamashita, K.³

9
- 36549102135
- G. M. Sessler, B. Hahn, and D. Y. Yoon, J. Appl. Phys. 60, 318 (1986).
- (1986) J. Appl. Phys. , vol.60 , pp. 318
- Sessler, G.M.¹ Hahn, B.² Yoon, D.Y.³

10
- 0022157537
- Y. Suzuoki, H. Muto, T. Mizutani, and M. Ieda, J. D: Appl. Phys. 18, 2293 (1985).
- (1985) J. D: Appl. Phys. , vol.18 , pp. 2293
- Suzuoki, Y.¹ Muto, H.² Mizutani, T.³ Ieda, M.⁴

11
- 0029324566
- Z. Leo Wu and G. R. Govinda Raju, IEEE Trans. Dielectr. Electr. Insul. 2, 475 (1995).
- (1995) IEEE Trans. Dielectr. Electr. Insul. , vol.2 , pp. 475
- Leo Wu, Z.¹ Govinda Raju, G.R.²

12
- 0026852461
- M. Iwamoto and A. Fukuda, Jpn. J. Appl. Phys., Part 1 31, 1092 (1992).
- (1992) Jpn. J. Appl. Phys., Part 1 , vol.31 , pp. 1092
- Iwamoto, M.¹ Fukuda, A.²

13
- 0004005306
- Wiley, New York, Chap. 5
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 5.
- (1981) Physics of Semiconductor Devices, 2nd Ed.
- Sze, S.M.¹

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