Influence of source-drain tunneling on the subthreshold behavior of sub-10nm double-game MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 135-138

  Stadele M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-GATE TRANSISTOR; ENERGY DEPENDENCE; LOW TEMPERATURES; SOURCE-DRAIN CURRENT; SUB-THRESHOLD BEHAVIOR; SUB-THRESHOLD CURRENT; SUBTHRESHOLD SWING; WKB APPROXIMATIONS;

EID: 25744462204     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194888     Document Type: Conference Paper

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