Study of thermally grown and photo-CVD deposited silicon oxide-silicon nitride stack layers

Semiconductor Science and Technology

Volumn 18, Issue 7, 2003, Pages 670-675

  Sahu, B S ^a   Kapoor, A ^a   Srivastava, P ^a   Agnihotri, O P ^a   Shivaprasad, S M ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILICA; SILICON NITRIDE; SILICON WAFERS; STOICHIOMETRY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE-VOLTAGE MEASUREMENT; PHOTOCHEMICAL VAPOUR DEPOSITION; SILICON-OXIDE SILICON NITRIDE STACK LAYER;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038374308     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/312     Document Type: Article

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